? 1998, 2000 mos field effect transistor 2sk3111 switching n-channel power mos fet industrial use document no. d13334ej2v0ds00 (2nd edition) date published may 2001 ns cp(k) printed in japan data sheet the mark shows major revised points. the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all devices/types available in every country. please check with local nec representative for availability and additional information. description the 2sk3111 is n channel mos fet device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as dc/dc converter, actuator driver. features ? gate voltage rating 30 v ? low on-state resistance r ds(on) = 180 m ? max. (v gs = 10 v, i d = 10 a) ? low input capacitance c iss = 1000 pf typ. (v ds = 10 v, v gs = 0 v) ? avalanche capability rated ? built-in gate protection diode ? surface mount device available absolute maximum ratings (t a = 25 c) drain to source voltage (v gs = 0 v) v dss 200 v gate to source voltage (v ds = 0 v) v gss 30 v drain current (dc) (t c = 25 c) i d(dc) 20 a drain current (pulse) note1 i d(pulse) 60 a total power dissipation (t a = 25 c) p t1 1.5 w total power dissipation (t c = 25 c) p t2 65 w channel temperature t ch 150 c storage temperature t stg ? 55 to +150 c single avalanche current note2 i as 20 a single avalanche energy note2 e as 100 mj notes 1. pw 10 s, duty cycle 1 % 2. starting t ch = 25 c, v dd = 100 v, r g = 25 ? , v gs = 20 v 0 v ordering information part number package 2sk3111 to-220ab 2sk3111-s to-262 2SK3111-Zj to-263
data sheet d13334ej2v0ds 2 2sk3111 electrical characteristics (t a = 25 c) characteristics symbol test conditions min. typ. max. unit drain leakage current i dss v ds = 200 v, v gs = 0 v 100 a gate leakage current i gss v gs = 30 v, v ds = 0 v 10 a gate to source cut-off voltage v gs(off) v ds = 10 v, i d = 1 ma 2.5 4.5 v forward transfer admittance | y fs |v ds = 10 v, i d = 10 a 3.0 s drain to source on-state resistance r ds(on) v gs = 10 v, i d = 10 a 120 180 m ? input capacitance c iss v ds = 10 v 1000 pf output capacitance c oss v gs = 0 v 300 pf reverse transfer capacitance c rss f = 1 mhz 150 pf turn-on delay time t d(on) v dd = 100 v 25 ns rise time t r i d = 10 a 90 ns turn-off delay time t d(off) v gs(on) = 10 v 80 ns fall time t f r g = 10 ? 40 ns total gate charge q g v dd = 160 v 40 nc gate to source charge q gs v gs = 10 v 7 nc gate to drain charge q gd i d = 20 a 25 nc diode forward voltage v f(s-d) i f = 20 a, v gs = 0 v 1.0 v reverse recovery time t rr i f = 20 a, v gs = 0 v 300 ns reverse recovery charge q rr di/dt = 50 a/ s1.7 c bv dss test circuit 3 gate charge v gs = 20 0 v pg. r g = 25 ? 50 ? d.u.t. l v dd test circuit 1 avalanche capability pg. r g = 10 ? d.u.t. r l v dd test circuit 2 switching time r g pg. i g = 2 ma 50 ? d.u.t. r l v dd i d v dd i as v ds starting t ch v gs 0 = 1 s duty cycle 1 % v gs wave form i d wave form v gs i d 10 % 0 0 90 % 90 % 90 % v gs(on) i d t on t off t d(on) t r t d(off) t f 10 %10 %
data sheet d13334ej2v0ds 3 2sk3111 typical characteristics (t a = 25c) drain current vs. drain to source voltage v ds - drain to source voltage - v i d - drain current - a 10 20 30 50 10 0 pulsed 20 30 40 60 70 0 v gs = 10 v v gs = 30 v 0.01 0 0.1 1 10 510 0.001 100 v ds = 10 v pulsed t ch = 125 ?c 75 ?c 25 ?c - 25 ?c forward transfer characteristics v gs - gate to source voltage - v i d - drain current - a gate to source cut-off voltage vs. channel temperature t ch - channel temperature - ? c v gs(off) - gate to source cut-off voltage - v v ds = 10 v i d = 1 ma ? 50 0 150 50 2.0 2.5 100 3.0 3.5 4.0 4.5 5.0 forward transfer admittance vs. drain current |y fs | - forward transfer admittance - s i d - drain current - a 1 1 10 10 100 v ds = 10 v pulsed t ch = ? 25 ? c 25 ? c 75 ? c 125 ? c 0.01 0.1 100 0.01 0.1 pulsed drain to source on-state resistance vs. gate to source voltage v gs - gate to source voltage - v r ds(on) - drain to source on-state resistance - m ? 08 100 10 16 300 200 400 500 0 20 246 1214 18 i d = 20 a 10 a 4 a drain to source on-state resistance vs. drain current i d - drain current - a r ds(on) - drain to source on-state resistance - m ? 600 400 300 100 10 100 0.1 0 1 pulsed v gs = 30 v v gs = 10 v 200 500
data sheet d13334ej2v0ds 4 2sk3111 drain to source on-state resistance vs. channel temperature 50 150 r ds (on) - drain to source on-state resistance - m ? 200 0 0 100 ? 50 t ch - channel temperature - ? c 300 100 v gs = 10 v pulsed 350 250 150 50 i d = 10 a i d = 20 a capacitance vs. drain to source voltage v ds - drain to source voltage - v c iss , c oss , c rss - capacitance - pf 0.1 100 1000 1 10 100 v gs = 0 v f = 1 mhz c iss c oss c rss 10 10000 1000 switching characteristics i d - drain current - a t d(on) , t r , t d(off) , t f - switching time - ns 1 0.1 10 100 1000 1 10 100 v dd = 100 v v gs = 10 v r g = 10 ? t d(off) t d(on) t r t f reverse recovery time vs. diode current i f - diode current - a t rr - reverse recovery time - ns 0.1 10 1 10 100 100 di/dt = 50 a/ s v gs = 0 v 1 1000 v gs - gate to source voltage - v dynamic input/output characteristics q g - gate charge - nc v ds - drain to source voltage - v 0 10 2030405060 50 100 150 200 2 4 6 8 0 10 12 14 16 0 v dd = 160 v 100 v 40 v v gs v ds i d = 20 a source to drain diode forward voltage v sd - source to drain voltage - v i sd - diode forward current - a 0.0 0.1 1 10 0.5 1.0 1.5 100 v gs = 10 v 0 v pulsed
data sheet d13334ej2v0ds 5 2sk3111 derating factor of forward bias safe operating area t c - case temperature - ? c dt - percentage of rated power - % 0 20 40 60 80 100 120 140 160 20 40 60 80 100 total power dissipation vs. case temperature t c - case temperature - ? c p t - total power dissipation - w 0 20 40 60 80 100 120 140 160 70 60 50 40 30 20 10 0 forward bias safe operating area 10 100 1000 i d - drain current - a 1 v ds - drain to source voltage - v 100 10 1 0.1 100 s 10 ms 1 ms pw = 10 s r ds(on) limited i d(pulse) i d(dc) 3 ms power dissipation limited t c = 25 ? c single pulse transient thermal resistance vs. pulse width pw - pulse width - s r th (t) - transient thermal resistance - ? c/w 1 0.01 0.1 10 100 1m 10m 100m 1 10 1000 100 100 single pulse 10 r th(ch-a) = 83.3 ? c/w r th(ch-c) = 1.92 ? c/w
data sheet d13334ej2v0ds 6 2sk3111 single avalanche energy derating factor 75 150 125 80 40 0 starting t ch - starting channel temperature - ? c energy derating factor - % 50 100 25 100 60 20 v dd = 100 v r g = 25 ? v gs = 20 v 0 v i as 20 a 0.01 10 0.1 1 10 100 v dd = 100 v v gs = 20 v 0 v r g = 25 ? starting t ch = 25 ? c 1 single avalanche current vs. inductive load l - inductive load - mh i as - single avalanche current - a i as = 20 a e as = 100 mj
data sheet d13334ej2v0ds 7 2sk3111 package drawings (unit : mm) 1)to-220ab (mp-25) 2)to-262 (mp-25 fin cut) 3)to-263 (mp-25zj) remark the diode connected between the gate and source of the transistor serves as a protector against esd. when this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 4.8 max. 1.gate 2.drain 3.source 4.fin (drain) 1 2 3 10.6 max. 10.0 typ. 3.60.2 4 3.00.3 1.30.2 0.750.1 2.54 typ. 2.54 typ. 5.9 min. 6.0 max. 15.5 max. 12.7 min. 1.30.2 0.50.2 2.80.2 4.8 max. 1.gate 2.drain 3.source 4.fin (drain) 1 2 3 10 typ. 1.30.2 0.750.3 2.54 typ. 2.54 typ. 8.50.2 12.7 min. 1.30.2 0.50.2 2.80.2 1.00.5 4 1.40.2 1.00.5 2.54 typ. 2.54 typ. 8.50.2 123 5.70.4 4 4.8 max. 1.30.2 0.50.2 1.gate 2.drain 3.source 4.fin (drain) 0.70.2 10 typ. 0.5r typ. 0.8r typ. 2.80.2 equivalent circuit source body diode gate protection diode gate drain
2sk3111 m8e 00. 4 the information in this document is current as of may, 2001. the information is subject to change without notice. for actual design-in, refer to the latest publications of nec's data sheets or data books, etc., for the most up-to-date specifications of nec semiconductor products. not all products and/or types are available in every country. please check with an nec sales representative for availability and additional information. no part of this document may be copied or reproduced in any form or by any means without prior written consent of nec. nec assumes no responsibility for any errors that may appear in this document. nec does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of nec semiconductor products listed in this document or any other liability arising from the use of such products. no license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec or others. descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. nec assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. while nec endeavours to enhance the quality, reliability and safety of nec semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. to minimize risks of damage to property or injury (including death) to persons arising from defects in nec semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. nec semiconductor products are classified into the following three quality grades: "standard", "special" and "specific". the "specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. the recommended applications of a semiconductor product depend on its quality grade, as indicated below. customers must check the quality grade of each semiconductor product before using it in a particular application. "standard": computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "special": transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "specific": aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. the quality grade of nec semiconductor products is "standard" unless otherwise expressly specified in nec's data sheets or data books, etc. if customers wish to use nec semiconductor products in applications not intended by nec, they must contact an nec sales representative in advance to determine nec's willingness to support a given application. (note) (1) "nec" as used in this statement means nec corporation and also includes its majority-owned subsidiaries. (2) "nec semiconductor products" means any semiconductor product developed or manufactured by or for nec (as defined above). ? ? ? ? ? ?
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